AGD Production AGD GaNTube 120KT MKIV

• The new AGD GaNTubeTM 120KT MKIV represents the fourth generation of the AGD GaNTube platform since its introduction in 2020. It is the result of a continuous journey of innovation and refinement, developed to merge perfection and beauty in the art of audio reproduction.
• At the core of the design is a pair of the latest and most advanced 650V-rated HEMT Gallium Nitride power MOSFETs. These new-generation devices are fundamental to the improved efficiency, greater power capability, speed, precision, and reference-grade musical performance of the AGD Gran Vivace MKIV
• Refined thermal management, an improved low-noise linear regulator stage, and higher-reliability passive components have each been carefully engineered to elevate overall performance, while preserving the elegance, simplicity, and upgradeability that define the AGD design philosophy.
• The refinement of upper-frequency operation delivers a direct and positive impact on the overall sonic and musical presentation, with exceptional realism, transparency, and natural expression through the mid and high frequencies.
• The GaNTube 120KT MKIV is a refined expression of AGD’s vision, pushing performance, transparency, and musical realism to a new level.

Technical Highlights

• New Gallium Nitride power stage based on the latest 650V GaN HEMT HV MOSFET devices.
• Enhanced thermal design.
• Improved low-noise linear regulator stage.
• Redesigned power stage with optimized layout.
• New linear supply rails with increased capacitor bank and long-life, high-reliability-grade passive components.
• 400W into 4 ohms.
• 800kHz PWM switching frequency.
• 60A peak current capability.
• Class-D amplifier topology.
• Designed and manufactured in California, USA.

• New 600W continuous, fully GaN-based power supply, capable of delivering up to 6kW peak power (100ms, 60Apk).
• The new advanced AGD PS design has a resonant topology for the primary stage and a dual-stage PFC front-end, (which ensures and optimal sinusoidal current absorption and enhanced voltage supply stability).
• Unlike conventional designs, this 100% GaN implementation provides ultra-fast transient response, dramatically reduced switching losses, and exceptional power density.
• The result is an amplifier that responds instantly to dynamic demands while maintaining absolute control and low noise.

2644 Via Valdes

Palos Verdes Estates

90274 CA (USA)

agdsupport@agdproduction.com